Compact Modeling of Gate-All-Around MOSFETs
碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 102 === Following Moore's Law, CMOS transistors continue to scale. Many small-geometry effects have surfaced such as short-channel effects, limiting the device performance. In order to overcome the scaling issues, improving device gate capability is needed. Multi...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02250983932854498799 |