The Study on Silicon Nitride Particles Defects Resulting from Chemical Vapor Deposition Using a Vertical Furnace

• Main Authors: Wen-Chung Huang, 黃文忠
• Other Authors: Min-Yen Yeh
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/6ukkfg

碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 102 === As the size of semiconductor devices continue to shrink, particle plays an important role in vital defects. Recently, high-performance and small-size electronic components are highly developed using nano- scale-semiconductor technology. At the nanoscale, particle defects become more challenging in the next generation semiconductor process. In this work, we had analyzed possible transport paths of particle defects. At first, patterns and characteristics of particle defects were analyzed and classified into different types and categories using why-why issue analysis and fishbone diagram as the research policy to identified the problems. As we compared before and after the deposition, it was found that parts of particle defects was caused by the transport path when a vertical furnace was used for chemical vapor deposition of silicon nitride. Next, we applied why-why analysis and fish bone diagram to explore key sources of particle defects resulting from the chemical vapor deposition of silicon nitride. We had made an observation of the occurrence of particle defects by giving higher pressure in the vertical furnace to help to analyze and classify problems. The analyzed methodology can save us much time for solving problems. In the future, as the size of semiconductor components continues to shrink particle defects will be a top topic in product yields.