Study on characteristics and Reliability on N/P-Type FinFET Devices
碩士 === 國立高雄師範大學 === 電子工程學系 === 102 === In thin work, Negative Bias Temperature Instability (NBTI), Positive Bias Temperature Instability (PBTI) and Hot Carrier Effect (HCE) were used to study the reliability of FinFET devices. Power law analyze was used to analysis the degradations of devices. NBTI...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78347153883008880032 |