Investigation of AlGaN/AlN/GaN-Based High Electron Mobility Transistors
碩士 === 國立高雄師範大學 === 電子工程學系 === 102 === Because GaN material has wide band gap, high chemical stability, high corrosion resistance, and high temperature resistance property, it has been widely applied in defense of military and industry. The GaN-based high electron mobility transistors (HEMTs) has ex...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89730097056360713286 |