Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 102 === With the progress of technology, high capacity and scalable are required in the future. Recent years, the physical limit is approached and a next-generation memory is inevitably. In addition, non- volatile memory occupies more than 96% in the memory market,...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9bdks5 |