A Cathodoluminescence study of in gap level in TiO2
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 102 === The study foucus on analysis of in-gap level on TiO2 bulk in different dopping-doped and different P_(O_2 )by XRD, SEM-CL. The experiment results showed that the Nb2O5-doped TiO2 form the defect Nb_Ti^∙ under the conduction band, and the energy gap is 2.77...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/skz2zr |