Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism
博士 === 國立中山大學 === 物理學系研究所 === 102 === In recent years, the requirement of nonvolatile memory has become more and more importance due to the rapid development of the portable electronic products. To increase the capacity of nonvolatile memory, the density per unit cell must be increased. However, the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ts6zxn |