Investigation of the Doping Profile in Stacked Graphene Flakes on TiOx by Scanning Tunneling Spectroscopy
碩士 === 國立中山大學 === 物理學系研究所 === 102 === In recent years, graphene has been one of the popular materials due to its high mobility. Therefore, it is a potential candidate to replace Si as the base material of electronic components. However, compared to p-type graphene transistors, a stable n-type graphe...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45367181597661815614 |