Investigation of the Hot Carrier and Self-Heating Effects in InGaZnO Thin Film Transistor with U- and I-shaped structure for Advanced Displays
碩士 === 國立中山大學 === 物理學系研究所 === 102 === In the first section, we investigate the hot-carrier effect in indium–gallium–zinc oxide (IGZO) thin film transistors with symmetric and asymmetric source/drain structures. The different degradation behaviors after hot-carrier stress in symmetric and asymmetric...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65152335638736037646 |