Study of interfacial electronic properties in heterostructures using scanning tunneling spectroscopy
博士 === 國立中山大學 === 物理學系研究所 === 102 === Hetero-interface has been studied for decades due to the unique physical properties through the interfacial boundary condition. The advance of epitaxial growth technique provides a powerful way to manipulate the interfacial layer in atomic scale accuracy. Conseq...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87358200466332879334 |