Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides
碩士 === 國立中山大學 === 電機工程學系研究所 === 102 === Due to the high electron mobility compared with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs), indium phosphide (InP), indium gallium arsenide (InGaAs)) high-speed devices. The high-k material TiO2 not only has h...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ggp92v |