Study on Diamond-Like Carbon Resistive Random Access Memory
碩士 === 國立中山大學 === 機械與機電工程學系研究所 === 102 === In recent study, C doped SiO2 was found as a dielectric layer exhibiting a very good RRAM performance. The resistive switching mechanism of C:SiO2 RRAM are different from the other kinds of metal oxide filament like device switching by oxygen ions. Therefor...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/r744cu |