Characterization of Amorphous Carbon Resistive Random Access Memory

博士 === 國立中山大學 === 機械與機電工程學系研究所 === 102 === The increasing demand for flash memory densities by scaling dimension is a formidable challenge due to physical limitations. Recently, carbon-based resistive random access memory (RRAM) exhibits to be a promising candidate for high density and low power con...

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Bibliographic Details
Main Authors: Yi-jiun Chen, 陳怡均
Other Authors: Tai-Fa Young
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/5xr43a