A Electrical Measurement Study on Phase-Change of Silicon-Doped GeSb based Alloys

碩士 === 國立清華大學 === 材料科學工程學系 === 102 === Recently, there is a lot of research about various phase-change materials, because of the ultrafast crystallizing of GeSb9, it becomes one of the emerging candidates; however, the electrical resistance of its crystalline phase is too low to be used practically...

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Bibliographic Details
Main Authors: Kao, Tun-Min, 高敦敏
Other Authors: 周麗新
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/vk2c65