A Electrical Measurement Study on Phase-Change of Silicon-Doped GeSb based Alloys

• Main Authors: Kao, Tun-Min, 高敦敏
• Other Authors: 周麗新
• Format: Others
• Language: en_US
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/vk2c65

碩士 === 國立清華大學 === 材料科學工程學系 === 102 === Recently, there is a lot of research about various phase-change materials, because of the ultrafast crystallizing of GeSb9, it becomes one of the emerging candidates; however, the electrical resistance of its crystalline phase is too low to be used practically in PCRAM because of the requirement of too high RESET current, the research in our lab is focused on the Si-doped GeSb9, which has higher electrical resistance in the crystalline phase. In my experiments, by using the electrical measurement system, the information about the crystallization mechanism of different composition contents of Si-doped GeSb9 could be obtained. The results show that the crystallization temperature and crystallization activation energy both increase with the Si concentration; second, the type of semiconductor in amorphous state changes from an intrinsic semiconductor to the n-type semiconductor as the Si concentration is increased; third, in isothermal treatments, provided the Si concentration is over some certain value, the incubation and transition time totally change, which means the controlling factor in the crystallization changes from the interface reaction to the diffusion.