Fabrication and Characterization of Enhancement-mode p-GaN/AlGaN/GaN HEMTs
碩士 === 國立清華大學 === 電子工程研究所 === 102 === In this thesis, enhancement-mode p-GaN/AlGaN/GaN HEMTs on a silicon substrate were fabricated. The p-type doped GaN and AlGaN/GaN barrier junction can be considered as a PN junction, so using p-type GaN as gate is able to deplete the 2DEG channel at a Vg=0V, t...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/78769138198386419357 |