Layer Aware Temperature Compensated Bit Line-clamp Generator for 3D BE-SONOS TFT NAND FLASH Memory
碩士 === 國立清華大學 === 電子工程研究所 === 102 === In the modern semiconductor memory, NAND flash plays an important role to data storage. It can achieve high cell density and low cost with the smallest cell area in the planar semiconductor memory. To develop up-to-date product, increasing the density and decrea...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/394rg7 |