Improvement of HfO2-based Bipolar Resistive Random Access Memory
碩士 === 國立清華大學 === 電子工程研究所 === 102 === The resistive RAM has advantages of simple structure, high density, fast switching speed, low power operation, and reliable retention. Furthermore, some RRAMs are friendly for CMOS integration. Thus, RRAM has a great potential as mainstream memories in the futur...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67113035360281105921 |