High performance SRAM by block forward body bias (FBB)
碩士 === 國立清華大學 === 電子工程研究所 === 102 === Static Random Access Memories (SRAM) provide an fast data storage and access for most of today's digital IC's, and thus their access time is important for these IC’s performance. However, due to technology improvement the word-line (WL) pulse of the fa...
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| Format: | Others |
| Language: | en_US |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64605770842479810363 |