Study of Novel Junctionless Field-Effect Transistors
碩士 === 國立清華大學 === 工程與系統科學系 === 102 === The junctionless transistor is proposed to be a future device because of the simple fabrication and suffered the suppression of On-current owing to the thin channel structure. The raised source and drain (RSD) structure is combined with the juncitonless transis...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63899706390735573697 |