Nanostructure-enhanced Broadband Photodetector Based on Graphene/CdSe Quantum Dot/Silicon Multiple Junctions

碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 102 === The thesis studies the fabrication of efficient broadband(380 nm ~ 940 nm) photodetector(PD) base on graphene/CdSe QDs/Si multiple junctions. At 2 V bias for the graphene side, the external quantum efficiency(EQE) up to 218 % at 510 nm and the responsivity as...

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Bibliographic Details
Main Authors: Zhan, Jun-Yu, 詹竣宇
Other Authors: Lin, Tai-Yuan
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/83937728306479422712