Nanostructure-enhanced Broadband Photodetector Based on Graphene/CdSe Quantum Dot/Silicon Multiple Junctions
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 102 === The thesis studies the fabrication of efficient broadband(380 nm ~ 940 nm) photodetector(PD) base on graphene/CdSe QDs/Si multiple junctions. At 2 V bias for the graphene side, the external quantum efficiency(EQE) up to 218 % at 510 nm and the responsivity as...
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ndltd-TW-102NTOU56140072017-01-07T04:08:38Z http://ndltd.ncl.edu.tw/handle/83937728306479422712 Nanostructure-enhanced Broadband Photodetector Based on Graphene/CdSe Quantum Dot/Silicon Multiple Junctions 石墨烯/硒化鎘量子點/矽多接面奈米結構增強寬頻帶光偵測器 Zhan, Jun-Yu 詹竣宇 碩士 國立臺灣海洋大學 光電科學研究所 102 The thesis studies the fabrication of efficient broadband(380 nm ~ 940 nm) photodetector(PD) base on graphene/CdSe QDs/Si multiple junctions. At 2 V bias for the graphene side, the external quantum efficiency(EQE) up to 218 % at 510 nm and the responsivity as high as 0.9 A/W for the range from 520 nm to 660 nm were achieved. The response time and recovery time are 0.24 ms and 0.28 ms, respectively. Under bias of -2 V for the graphene side, the dark current, photocurrent and on/off ratio was fou- nd to be 1.77#westeur024#10-6 A, 2.06#westeur024#10-4 A and ~10+2, respectively. It was found that when CdSe QDs were added, the EQE and responsivity of graphene/CdSe QDs/Si PD with respect to that of graphene/Si PD were enhanced together with the increase in the absorption band of the detector ranging from ultraviolet to near-infrared. Thus the graphene/CdSe QDs/Si multiple junctions can form the efficient broadband phtodetector. Lin, Tai-Yuan 林泰源 2014 學位論文 ; thesis 63 zh-TW |
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碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 102 === The thesis studies the fabrication of efficient broadband(380 nm ~ 940 nm) photodetector(PD) base on graphene/CdSe QDs/Si multiple junctions. At 2 V bias for the graphene side, the external quantum efficiency(EQE) up to 218 % at 510 nm and the responsivity as high as 0.9 A/W for the range from 520 nm to 660 nm were achieved. The response time and recovery time are 0.24 ms and 0.28 ms, respectively. Under bias of -2 V for the graphene side, the dark current, photocurrent and on/off ratio was fou-
nd to be 1.77#westeur024#10-6 A, 2.06#westeur024#10-4 A and ~10+2, respectively. It was found that when CdSe QDs were added, the EQE and responsivity of graphene/CdSe QDs/Si PD with respect to that of graphene/Si PD were enhanced together with the increase in the absorption band of the detector ranging from ultraviolet to near-infrared. Thus the graphene/CdSe QDs/Si multiple junctions can form the efficient broadband phtodetector.
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author2 |
Lin, Tai-Yuan |
author_facet |
Lin, Tai-Yuan Zhan, Jun-Yu 詹竣宇 |
author |
Zhan, Jun-Yu 詹竣宇 |
spellingShingle |
Zhan, Jun-Yu 詹竣宇 Nanostructure-enhanced Broadband Photodetector Based on Graphene/CdSe Quantum Dot/Silicon Multiple Junctions |
author_sort |
Zhan, Jun-Yu |
title |
Nanostructure-enhanced Broadband Photodetector Based on Graphene/CdSe Quantum Dot/Silicon Multiple Junctions |
title_short |
Nanostructure-enhanced Broadband Photodetector Based on Graphene/CdSe Quantum Dot/Silicon Multiple Junctions |
title_full |
Nanostructure-enhanced Broadband Photodetector Based on Graphene/CdSe Quantum Dot/Silicon Multiple Junctions |
title_fullStr |
Nanostructure-enhanced Broadband Photodetector Based on Graphene/CdSe Quantum Dot/Silicon Multiple Junctions |
title_full_unstemmed |
Nanostructure-enhanced Broadband Photodetector Based on Graphene/CdSe Quantum Dot/Silicon Multiple Junctions |
title_sort |
nanostructure-enhanced broadband photodetector based on graphene/cdse quantum dot/silicon multiple junctions |
publishDate |
2014 |
url |
http://ndltd.ncl.edu.tw/handle/83937728306479422712 |
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