Photoluminescence Study of Surface Plasmon Coupling Behaviors with an InGaN/GaN Quantum Well
碩士 === 國立臺灣大學 === 光電工程學研究所 === 102 === The pump power dependent, continuous and time-resolved photoluminescence (PL) measurements at 10 and 300 K in the three regions on two single InGaN/GaN quantum well (QW) epitaxial structures with the GaN capping layer thicknesses at 15 and 120 nm are performed....
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95253986959446264096 |