Resistive Memory of Single SnO2 Nanowire Based Switchable Diodes
碩士 === 國立臺灣大學 === 物理研究所 === 102 === Resistive switching is observed in single SnO2 nanowire device with two back-to-back Schottky diodes. The underlying mechanism can be interpreted well by the switchable diode effect, which is caused by tunable Schottky barrier height due to the drift of charged de...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30067201719783211506 |