The Fabrication and Analysis of High-Power AlGaN/GaN High Electron Mobility Transistor
碩士 === 國立臺灣大學 === 電子工程學研究所 === 102 === GaN is a stable semiconductor material with wide bandgap of 3.4eV which can apply to high-voltage devices, and because of its direct-bandgap property, we commonly used in bright LED of short wavelength with 405nm. In addition,AlGaN/GaN hetero-junction has outst...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37874936774474346400 |