Design of GaAs and SiGe Amplifiers at Millimeter Wave and Research of GaAs pHEMT Modeling at Room Temperature and Cryogenic Temperature
碩士 === 國立臺灣大學 === 電信工程學研究所 === 102 === In this thesis, an LNA from 20 to 48 GHz in WIN 0.15-μm pHEMT process is designed and measured. The measurement results agree well with the simulation by the models provided by WIN. For designing amplifiers in WIN 0.1-μm pHEMT, the Angelov model of WIN 0.1-...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66448606238140820648 |