| Summary: | 碩士 === 國立臺灣大學 === 電信工程學研究所 === 102 === In this thesis, an LNA from 20 to 48 GHz in WIN 0.15-μm pHEMT process is designed and measured. The measurement results agree well with the simulation by the models provided by WIN.
For designing amplifiers in WIN 0.1-μm pHEMT, the Angelov model of WIN 0.1-μm pHEMT process is generated, and this model can be used in small signal and large signal simulation.
An LNA from 27 to 45 GHz in WIN 0.1-μm pHEMT is designed. The measurement results of the LNA agree with the simulated results using the model. Besides, to eliminate the thermal noise, the devices are operated in cryogenic temperature. The small signal model in cryogenic temperature is established. The noise temperature of the LNA in cryogenic operation is much lower than that at room temperature. The test transistor is also measured at cryogenic temperature, and the small-signal model is extracted to compare with that at room temperature. It is observed that the gain of the LNA in WIN 0.1-μm pHEMT does not increase at cryogenic operation, but the noise performance is enhanced substantially.
For D-band applications, the 0.13-μm silicon-germanium heterojunction bipolar transistor is used to design a broadband amplifier from 75 to 140 GHz. The cascoded structure is implemented to achieve high gain, and the bias is realized by the current mirror to accurately control the base current.
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