Study of the Characteristic of the Stress Induced by Through-Silicon Via and the Stress Constraint/Modulation Structure
碩士 === 國立臺灣大學 === 機械工程學研究所 === 102 === In this work, numerical simulation was used to predict the thermal stress and keep-out zone defined as where carrier mobility changes too much for the devices to turn on. By considering the anisotropic characteristics of the silicon, it is thought that the angl...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/19431227943297243566 |