Growth and characterization of nitrogen doped ZnO

• Main Authors: Wei-chen Lin, 林威辰
• Other Authors: Ying-Sheng Huang
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/54299612587803582505

碩士 === 國立臺灣科技大學 === 電子工程系 === 102 === Nitrogen doped ZnO thin films were prepared by reactive ion beam sputter deposition. Argon, oxygen and nitrogen were passed simultaneously through the ion source and the effect of gas flow rates on nitrogen doped ZnO were characterized. Experimental results show that nitrogen doped ZnO films deposited at 300°C with oxygen flow rate of 0.5-2.0 sccm and nitrogen flow rate of 0.5-2.0 sccm are all highly (002) oriented. Un-doped ZnO thin film shows compressive stress, while doping of nitrogen results in increase of c-axis constant and decrease of grain size. Un-doped ZnO shows Raman peaks at 436 cm-1, which corresponds to ZnO E2 (high). Doping nitrogen results in additional Raman peaks at 275 cm-1 ,and 582 cm-1. The two peaks represent the local vibration mode of nitrogen in ZnO, indicating successful doping of nitrogen into ZnO. Hall effect measurement results show that p-type ZnO may be achieved with a hole concentration of 1015 ~ 1016 cm-3 with an oxygen flow rate equal to 1.0 sccm and nitrogen flow rate higher than 1.5 sccm. Capacitance-voltage measurement results show that p-type ZnO may be achieved with an oxygen flow rate equal 0.5 sccm and nitrogen flow rate equal 2.0 sccm at 400°C.