Fabrication and characterization of GaN-based vertical-cavity surface-emitting diodes
碩士 === 國立臺灣科技大學 === 電子工程系 === 102 === It is difficult to grow high-quality epitaxial DBRs for GaN-based vertical-cavity surface-emitting lasers (VCSELs) resulting in VCSEL materials of low gain and high loss. Therefore we replaced the general silicon-oxide/silicon-nitride insulating layers with Si d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75977075211508077285 |