Preparation and Characterization of Forming-Free ZrOx-Based Thin Films for Resistive Switching Nonvolatile Memory Devices
博士 === 國立臺灣科技大學 === 材料科學與工程系 === 102 === Resistive switching random access memory (RRAM) has attracted great interest for the application in next generation nonvolatile memory. RRAM has gained significant interest in the past decade as one of the most promising candidates as a nonvolatile memory dev...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/15650208570900472687 |