| Summary: | 碩士 === 國立高雄大學 === 化學工程及材料工程學系碩士班 === 102 === In this work, comparison of RF magnetron sputtering and electron beam evaporation deposition of IGZO thin films.
First,we investigate the single component sputtering target and co-sputtering.we change different parameters of a single ingredient and get the best parameters:85% light transmission, 0.125Ω-cm resistivity and carrier concentration 6.9x1018 cm-3 and mobility 8.7cm2/Vs.Co-sputtering process parameters optimum resistance 5.91x10-4Ω-cm and a carrier concentration of 8x1019cm-3 and mobility are 65cm2/Vs and the transmittance 85%.
Another set of experiments comparing the single component vapor deposition, and the multilayer structure vapor deposition.
We get the single component vapor deposition with a resistivity of 1.5x10-1Ω-cm, the carrier concentration of 2x1019cm-3 and mobility 8cm2/Vs of the deposition temperature at RT, However, although the transparency of the heating process is 80%, but the resistance become 5x102Ω-cm, while in the multilayer structure, we obtain better electrical properties, and use SIMS and EDS analysis to proof the impact of multi-layer structure for the thin film
Finally, we discuss whether this material can be used in r-ram devices, investigate influence of the etching silicon substrate to the device. we get a good electrical performance as described in the I-V result.
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