Effect of Fabrication Process on the Characteristics of IGZO Thin Films and Devices

• Main Authors: Yu-zhen Liou, 柳郁禎
• Other Authors: Cheng-Fu Yang
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/24861383469945570019

碩士 === 國立高雄大學 === 化學工程及材料工程學系碩士班 === 102 === In this work, comparison of RF magnetron sputtering and electron beam evaporation deposition of IGZO thin films. First,we investigate the single component sputtering target and co-sputtering.we change different parameters of a single ingredient and get the best parameters:85% light transmission, 0.125Ω-cm resistivity and carrier concentration 6.9x1018 cm-3 and mobility 8.7cm2/Vs.Co-sputtering process parameters optimum resistance 5.91x10-4Ω-cm and a carrier concentration of 8x1019cm-3 and mobility are 65cm2/Vs and the transmittance 85%. Another set of experiments comparing the single component vapor deposition, and the multilayer structure vapor deposition. We get the single component vapor deposition with a resistivity of 1.5x10-1Ω-cm, the carrier concentration of 2x1019cm-3 and mobility 8cm2/Vs of the deposition temperature at RT, However, although the transparency of the heating process is 80%, but the resistance become 5x102Ω-cm, while in the multilayer structure, we obtain better electrical properties, and use SIMS and EDS analysis to proof the impact of multi-layer structure for the thin film Finally, we discuss whether this material can be used in r-ram devices, investigate influence of the etching silicon substrate to the device. we get a good electrical performance as described in the I-V result.