The Investigation on Subthreshold Behavior Model for the SOI Quadruple-Gate MOSFETs with/without the Localized Interface Trapped Charges
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 102 === Several studies have modeled the hot-carrier-induced threshold voltage of the planar and the double-gate MOSFETs in the past decade. The hot-carrier-induced positive or negative charges can be trapped in the interface between the gate oxide and the silicon fil...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85997562887584037700 |