Sputtered ZrO2 thin film and its resistive switching properties

碩士 === 國立聯合大學 === 電子工程學系碩士班 === 102 === This paper investigates the resistive switching properties of Ag/ZrO2/ITO sandwiched device. Various preparing conditions of deposition time 60/180/300 min and mixed ratio of Ar to O2 atmosphere were adopted to find the optimal current- voltage characteristics...

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Bibliographic Details
Main Authors: Hao-Hsiang Hsu, 許皓翔
Other Authors: Chun-Hung Lai
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/99825085822638704203