Characterization of AlGaN ultraviolet photodetectors formed by Selective-area regrowth technology
碩士 === 南台科技大學 === 光電工程系 === 102 === In this study, we demonstrated AlxGa1-xN-based solar-blind photodiodes(PDs) with inverted p-i-n structure using selective-area regrowth technique to grow GaN/AlGaN heterojunction on p-GaN templates. The p-type AlGaN top layer in a traditional AlGaN-based p-i-n pho...
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| Format: | Others |
| Language: | zh-TW |
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7j6jy3 |