Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by High Reflection Electrode Under Metal PadEnhancement of Light Output Power of GaN-Based Light-Emitting Diodes by High Reflection Electrode Under Metal PadEnhancement of Light Output Power of GaN-Based Light-Emitting Diodes by High Reflection Electrode Under Metal Pad
碩士 === 南台科技大學 === 電子工程系 === 102 === In order to have a good electrical contact and good adhesion to the semiconductor, Cr was broad used to be an adhesive layer and ohmic contact layer under metal pad (Cr/Pt/Au) in the conventional InGaN/GaN light-emitting diodes (LEDs). A portion of the light was a...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/3qz7u7 |