Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by High Reflection Electrode Under Metal PadEnhancement of Light Output Power of GaN-Based Light-Emitting Diodes by High Reflection Electrode Under Metal PadEnhancement of Light Output Power of GaN-Based Light-Emitting Diodes by High Reflection Electrode Under Metal Pad
碩士 === 南台科技大學 === 電子工程系 === 102 === In order to have a good electrical contact and good adhesion to the semiconductor, Cr was broad used to be an adhesive layer and ohmic contact layer under metal pad (Cr/Pt/Au) in the conventional InGaN/GaN light-emitting diodes (LEDs). A portion of the light was a...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/3qz7u7 |
| Summary: | 碩士 === 南台科技大學 === 電子工程系 === 102 === In order to have a good electrical contact and good adhesion to the semiconductor, Cr was broad used to be an adhesive layer and ohmic contact layer under metal pad (Cr/Pt/Au) in the conventional InGaN/GaN light-emitting diodes (LEDs). A portion of the light was absorbed by the Cr adhesive layer due to its lower reflectivity and caused the external quantum efficiency decrease.
In this study, in order to reduce the light absorption by the Cr adhesive layer under metal pad, the optimized design of high reflection metal (HRM) structure under pad and finger width are investigated. The HRM structure (Cr/Al) under pad and finger with different Cr thicknesses and different finger widths are fabricated to evaluate the light reflectivity and shielding effect.
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