Performance Improvement of GaN Metal-Semiconductor-Metal Photodetectors with Sputtered AlN Nucleation Layer
碩士 === 南台科技大學 === 電子工程系 === 102 === Recently, III-V nitride-based semiconductor materials have attracted considerable interest. Due to their characteristics, the III-V nitride semiconductors are frequently used to fabricate light emitting diodes (LEDs) and photodetectors (PDs). However, the crystal...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/3957c2 |