Effect of Al Mole Fraction on the Electrical Characteristics of AlGaN/GaN HEMTs with Recessed Gate Structure
碩士 === 亞洲大學 === 光電與通訊學系 === 102 === GaN material had attracted much attention in the high-voltage, high-power and device-switching applications because of their material characteristics of wide band gap and high breakdown voltage. Additionally, high electron concentration is found at the AlGaN/GaN h...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49665082247807999266 |