The Study on Ultra High Voltage Low Substrate Current LIGBT with Double Epitaxial Layer Technology
碩士 === 東海大學 === 電機工程學系 === 102 === When lateral insulated gate bipolar transistor (LIGBT) turns on, there is a hole current injecting from the P+-anode heading to underneath and lateral area. The hole current flowing to p-type substrate will cause substrate leakage current and influence the electric...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85324409079609169857 |