| Summary: | 碩士 === 國立臺北科技大學 === 工程科技研究所 === 102 === Gallium-doped zinc oxide (GZO) thin film was deposited on glass substrates using the direct-current (DC) magnetron sputtering system with a GZO ceramic target .(The Ga2O3 contents are approximately 0.6 wt.%).The optical and electrical properties of GZO thin films with different deposition parameters ,including sputtering power, working pressure and substrate temperature were investigated .The material characterization includes film thickness using a-step, surface morphology using SEM ,electrical resistance using a Hall-effect method, optical property using UV-VIS spectrometry. Crystallinity is characterized using grazing-angle X-ray.The optical transmittance was determined by the UV-VIS spectrometry. All of the GZO films under various parameter had strong c-axis (002) preferred orientation. The minimum resistivity (4.4ⅹ10-3 Ω-cm) ,carrier concentration of 1.23ⅹ1021 cm-3 and Hall mobility of 1.128 cm2/Vs was obtained at 2.5 mTorr sputtering pressure.The optical transmittance in the visible range was approximately 94%.Under the same process parameters 3 wt.% GZO thin film resistivity can reach 4.9ⅹ10-4 Ω-cm.
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