| Summary: | 碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 102 === The Zn0.86Mg0.10Al0.04O films with 300 nm thickness were deposited onto Corning Eagle 2000 glass substrates by sputtering Zn0.82Mg0.14Al0.04O target using rf magnetron sputtering with various substrate temperature. The electric resistivity (ρ) of Zn0.86Mg0.10Al0.04O films continuously decreases from 5.12 x 10-2 Ω-cm to 4.19 x 10-2 Ω-cm as the substrate temperature is increased from 100oC to 300 oC. Hall measurement for the Zn0.86Mg0.10Al0.04O films sputtered in various substrate temperature. It shows that the carrier concentration are increases as the substrate temperature is increased from 100oC to 300oC, In this study, the electrical resistivity of Zn0.86Mg0.10Al0.04O films also reduced by various annealing temperature at substrate temperature of 300 oC. The ρ value could be reduced to 8.41 x 10-3 Ω-cm as annealing temperature of 200 oC. Further increasing annealing temperature to 400 oC and 500 oC respectively, the electric resistivity of Zn0.86Mg0.10Al0.04O films are further decreased to 7.85 x 10-3, and 7.78 x 10-3 Ω-cm. However, as the annealing temperature was increased to 600 oC, the electric resistivity of Zn0.86Mg0.10Al0.04O film is increased because the mobility is decreased and higher band gap.
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