Characteristics and Kink Effect of 28 nm nMOSFETs with HK/MG Stacks
碩士 === 國立臺北科技大學 === 機電整合研究所 === 102 === Recently, that is an imperative method to introduce high-k materials replacing the conventional oxynitride to be gate dielectrics. However, with the technique development fast, the physical gate oxide thickness still come to a critical range for the gate lea...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tg2gb9 |