Improvement of Blue InGaN/GaN Multiple Quantum Wells with Graded Layers Silicon Doping Barrier
碩士 === 國立中正大學 === 光機電整合工程研究所 === 103 === The characteristics of 8 periods of In0.2Ga0.8N/GaN quantum wells (QWs) with part of silicon-doped barriers under high injection current for high optical performance of blue light-emitting diodes (LED) are explored. With the use of patterned sapphire substrat...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/23k9zw |