Improved Device Performance of AlGaN/GaN HEMTs With Ga2O3 as Dielectric by Atomic Layer Deposition
碩士 === 長庚大學 === 電子工程學系 === 103 === We propose the metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) by atomic-layer-deposited (ALD) deposited gallium oxide (Ga2O3) as the gate dielectric and surface passivation layer that exhibited device performance superior to that of a conv...
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| Format: | Others |
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2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06638557287869887227 |