| Summary: | 碩士 === 中華科技大學 === 機電光工程研究所碩士班 === 103 === This study is divided into two parts, the first part is using the RF magnetron sputtering system deposit zinc oxide on different substrates, and using XRD, AFM, the Hall effect compares room temperature’s and high temperature’s FWHM, roughness and resistance rate. Finally, with the high temperature properties of zinc oxide deposited on different substrates to do more to find the best properties.
RF magnetron sputtering system, deposition of zinc oxide fixed conditions: Process power 150W, process pressure 5 mTorr, argon-oxygen gas flow ratio of 2: 2 (sccm) and sputtering time of 1 hr, changes in the temperature of the substrate to compare the characteristics of zinc oxide film thickness of about 1.08 ~ 1.15μm.
The second part is deposited ZnO thin films on a glass substrate and through photolithography, thermal deposition and lift-off method for IDT. And comparing the length of exposure time and affect the development of the line width and the length of time brings resolution, as well as directly to aluminum and chrome-plated aluminum effect on lift-off again at the time of thermal evaporation.
|
|---|
