The study of simulation and kinetic analysis for GaN/InN/InGaN by metal organic chemical vapor deposition
碩士 === 中原大學 === 化學工程研究所 === 103 === A zero-dimension reactor model and the chemical mechanisms of GaN / InN / InGaN metal organic chemical vapor deposition (MOCVD) have been investigated in this research. The influence of the process parameters is discussed by Rate-Of-Production analysis. It is foun...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4h863v |