The study of simulation and kinetic analysis for GaN/InN/InGaN by metal organic chemical vapor deposition

• Main Authors: Chun-Jung Chen, 陳俊榮
• Other Authors: Ta-Chin Wei
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/4h863v

碩士 === 中原大學 === 化學工程研究所 === 103 === A zero-dimension reactor model and the chemical mechanisms of GaN / InN / InGaN metal organic chemical vapor deposition (MOCVD) have been investigated in this research. The influence of the process parameters is discussed by Rate-Of-Production analysis. It is found that GaN reaction mechanism from literature can be successfully reduced and the model predictions agree with the experimental data. The model shows that the optimal temperature range for GaN MOCVD is from 900K to 1300K at diffusion-limit regime. The results of InN model show that the growth rate increases as temperature increases at kinetic-limit regime. However, the profile of growth rate at diffusion-limit regime is different from GaN model because the decomposition of InN occurs. The results indicate that the resident time is responsible for the effect of pressure on the growth rate in addition to the change of the surface species coverage. Lastly, we combine both GaN and InN models to establish the InGaN model and investigate the effects of the inlet gas ratio, temperature and pressure to the InGaN growth rate and indium composition of the film. This research has successfully established the model to deal with the complex chemical mechanism in InGaN MOCVD. All models agree with the experimental data. Thus, it enables to reduce the complexity of 2-D and 3-D modeling calculation.