The study of simulation and kinetic analysis for GaN/InN/InGaN by metal organic chemical vapor deposition

碩士 === 中原大學 === 化學工程研究所 === 103 === A zero-dimension reactor model and the chemical mechanisms of GaN / InN / InGaN metal organic chemical vapor deposition (MOCVD) have been investigated in this research. The influence of the process parameters is discussed by Rate-Of-Production analysis. It is foun...

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Bibliographic Details
Main Authors: Chun-Jung Chen, 陳俊榮
Other Authors: Ta-Chin Wei
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/4h863v

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